SiC/GaN Era: A Practical Guide to Avoid Pitfalls in Current Sensor Selection
In high-frequency power electronics systems dominated by SiC/GaN wide-bandgap devices, the bandwidth, transient response, and phase characteristics of current sensors are critical factors that determine control loop stability, protection reliability, and overall system efficiency. The rule-of-thumb from the IGBT era—“bandwidth is good enough”—has become one of the most overlooked sources of failure in high-frequency systems. […]